PART |
Description |
Maker |
M29W400BB90N6T M29W400BB90M1T M29W400BB55N1T |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽,引导块低压单电源闪
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STMicroelectronics N.V.
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M29W400 M29W400B-100ZA1TR M29W400B-120ZA1TR M29W40 |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory KPT 15C 14#20 1#16 PIN RECP RES 1 K OHM 1% 0805 KPT 2C 2#20 SKT PLUG KPTC 3C 3#20 PIN PLUG CAP .0056UF 250/275VAC ECQ-UL KPSE 10C 10#20 PIN RECP KPTC 3C 3#20 SKT PLUG 4兆位512KB的x856Kb的x16插槽,引导块低压单电源闪 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽,引导块低压单电源闪
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ST Microelectronics 意法半导 STMicroelectronics N.V.
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M36DR432AD M36DR432AD10ZA6T M36DR432AD12ZA6T M36DR |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
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STMICROELECTRONICS[STMicroelectronics]
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M36W416TG85ZA1T M36W416TG70ZA6T M36W416TG-ZAT M36W |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product CANMS3470L16-23PL/C 16兆x16插槽,开机区块快闪记忆体Mbit的SRAM56Kb x16,内存产品多
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意法半导 STMicroelectronics N.V.
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M28R400C-ZBT M28R400CTB120ZB1T M28R400CTB120ZB6T M |
4 Mbit (256Kb x16/ Boot Block) 1.8V Supply Flash Memory 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 4兆位56Kb的x16插槽,引导块.8V电源快闪记忆
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ST Microelectronics 意法半导 STMicroelectronics N.V. SGS Thomson Microelectronics
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M27V201 M27V201-100B1TR M27V201-100B6TR M27V201-10 |
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM 2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 2兆位56Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储 2.5-V/3.3-V 16-Bit Transparent D-Type Latches With 3-State Outputs 48-TSSOP -40 to 85 2兆位56Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM 2兆位56Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储 2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 48-TSSOP -40 to 85 2兆位256Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM 2兆位256Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储 2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 2兆位256Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储 2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-SSOP -40 to 85 2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 48-TVSOP -40 to 85 2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 48-SSOP -40 to 85 2.5-V/3.3-V 16-Bit Transparent D-Type Latches With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 Fuse Holder; Mounting Type:PC Board; For Use With:PC Board Fuses; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Voltage Rating, AC:250V; Voltage Rating, DC:450V; Accessory Type:Mounting Socket 2.5-V/3.3-V 16-Bit Transparent D-Type Latches With 3-State Outputs 48-SSOP -40 to 85 2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TVSOP -40 to 85 2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TSSOP -40 to 85 16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM NND - 2 MBIT (256KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics SGS Thomson Microelectronics
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M295V400BT45M1T M295V400BT45M3T M295V400BT45M6T M2 |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Single Supply Flash Memory From old datasheet system
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STMicroelectronics
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M29F200BB M29F200BB70N6 |
2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory
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Micron Technology
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M59DR032A M59DR032B M59DR032A120ZB1T M59DR032A100Z |
2M X 16 FLASH 1.8V PROM, 120 ns, PBGA48 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory 32兆位Mb x16插槽,双行,第低压闪 32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
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http:// NUMONYX STMicroelectronics N.V. 意法半导 ST Microelectronics
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M29W400T |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(4M位闪速存储器)
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意法半导
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